1201.5670 (A. Schulman et al.)

Resistive switching effects on the spatial distribution of phases in
metal-complex oxide interfaces    [PDF]

A. Schulman, C. Acha

In order to determine the key parameters that control the resistive switching
mechanism in metal-complex oxides interfaces, we have studied the electrical
properties of metal / YBa2Cu3O7-d (YBCO) interfaces using metals with different
oxidation energy and work function (Au, Pt, Ag) deposited by sputtering on the
surface of a YBCO ceramic sample. By analyzing the IV characteristics of the
contact interfaces and the temperature dependence of their resistance, we
inferred that ion migration may generate or cancel conducting filaments, which
modify the resistance near the interface, in accordance with the predictions of
a recent model.

View original: http://arxiv.org/abs/1201.5670