1202.3608 (Fabrizio Buscemi et al.)

Conduction, diffusion and noise of electrons in amorphous chalcogenides
at low electric fields    [PDF]

Fabrizio Buscemi, Enrico Piccinini, Rossella Brunetti, Massimo Rudan, Carlo Jacoboni

The low-field electron diffusion, noise, and the conduction in amorphous
chalcogenides are investigated by means of a Monte Carlo implementation of a
full three- dimensional variable-range hopping transport model between
localized states. Quantities like the carrier-velocity autocorrelation
function, the noise power spectrum, the diffusion coefficient and the ohmic
conductivity are obtained from numerical simulations at room temperatures and
lower. Some interesting features of the linear-response regime typical of
hopping transport are observed and discussed for the case of the amorphous
Ge2Sb2Te5.

View original: http://arxiv.org/abs/1202.3608