Lydia Nemec, Volker Blum, Patrick Rinke, Matthias Scheffler
First-principles surface phase diagrams reveal that epitaxial monolayer graphene films on the Si side of 3C-SiC(111) can exist as thermodynamically stable phases in a narrow range of experimentally controllable conditions, defining a path to the highest-quality graphene films. Our calculations are based on a van der Waals corrected density functional. The full, experimentally observed (6 sqrt(3)x 6 sqrt(3))-R30 supercells for zero- to trilayer graphene are essential to describe the correct interface geometries and the relative stability of surface phases and possible defects.
View original:
http://arxiv.org/abs/1304.7640
No comments:
Post a Comment