Genhua Pan, Mark Heath, David Horsell, M. Lesley Wears
Techniques for mass-production of large area graphene using an industrial scale thin film deposition tool could be the key to the practical realization of the wide range of technological applications of the material. Since the discovery of graphene, considerable progress in new production methods of graphene has been made, which includes chemical vapour deposition of graphene on metal substrates and epitaxial growth of graphene by thermal decomposition of single crystal SiC substrate under ultrahigh vacuum and very high temperature. However, growth of graphene from sputtered carbon sources has not been reported. Here we demonstrate the growth of large area polycrystalline graphene from a sputtered carbon containing layer (SiC or C) either underneath or atop a metal layer (Ni or Pt) by in-situ or ex-situ rapid thermal processing at temperatures ranging from 650 oC to 1000 oC. We also demonstrate in principle a potential route to mass-production of graphene-on-insulator, which could pave the way to an easy integration of graphene into modern semiconductor device process flows.
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http://arxiv.org/abs/1209.0489
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