Pham Nam Hai, Le Duc Anh, Shyam Mohan, Tsuyoshi Tamegai, Masaya Kodzuka, Tadakatsu Ohkubo, Kazuhiro Hono, Masaaki Tanaka
We show that by introducing isoelectronic iron (Fe) magnetic impurities and Beryllium (Be) double-donor atoms into InAs, it is possible to grow a n-type ferromagnetic semiconductor (FMS) with the ability to control ferromagnetism by both Fe and independent carrier doping by low-temperature molecular-beam epitaxy. We demonstrate that (In,Fe)As doped with electrons behaves as an n-type electron-induced FMS. This achievement opens the way to realize novel spin-devices such as spin light-emitting diodes or spin field-effect transistors, as well as helps understand the mechanism of carrier-mediated ferromagnetism in FMSs.
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http://arxiv.org/abs/1209.0250
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