Zheng Han, Amina Kimouche, Adrien Allain, Hadi Arjmandi-Tash, Antoine Reserbat-Plantey, Sébastien Pairis, Valérie Reita, Nedjma Bendiab, Johann Coraux, Vincent Bouchiat
By limiting the carbon segregation at the copper surface defects, a pulsed chemical vapor deposition method for single layer graphene growth is shown to inhibit the formation of few-layer regions, leading to a fully single-layered graphene homogeneous at the centimeter scale. Graphene field-effect devices obtained after transfer of pulsed grown graphene on oxidized silicon exhibit mobilities above 5000 cm^2.V^-1.s^-1.
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http://arxiv.org/abs/1205.1337
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