Hyung Joon Kim, Useong Kim, Hoon Min Kim, Tai Hoon Kim, Hyo Sik Mun, Byung-Gu Jeon, Kwang Taek Hong, Woong-Jhae Lee, Chanjong Ju, Kee Hoon Kim, Kookrin Char
We report that La-doped BaSnO3 with the perovskite structure shows an unprecedentedly high mobility at room temperature while retaining its optical transparency. In single crystals, the mobility reached 320 cm^2(Vs)^-1 at a doping level of 8x10^19 cm^-3, constituting the highest value among wide-band-gap semiconductors. In epitaxial films, the maximum mobility was 70 cm^2(Vs)^-1 at a doping level of 4.4x10^20 cm^-3. We also show that resistance of (Ba,La)SnO3 changes little even after a thermal cycle to 530 deg. C in air, pointing to an unusual stability of oxygen atoms and great potential for realizing transparent high-frequency, high-power functional devices.
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http://arxiv.org/abs/1204.6702
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