V. Leca, D. H. A. Blank, G. Rijnders
A chemical etching method was developed for (110) and (001) NdGaO3 single
crystal substrates in order to obtain an atomically flat GaO2-x - terminated
surface. Depending on their miscut angle the substrates were etched in
pH-controlled NH4F - or NH4Cl - based solutions, followed by an annealing step
at temperatures of 800-1000oC, in air or in oxygen flow, in order to
recrystallize the surface. Atomic Force Microscopy (AFM) and high-pressure
Reflection High Energy Electron Diffraction (RHEED) were used to analyse the
surface morphology of the samples after every treatment. Studies on the
chemistry and characteristics of the terminating layer showed that the
chemically etched NdGaO3 substrate surface has a GaO2-x termination and that
the (110) and (001) NdGaO3 surfaces are characterized by a different free
surface energy, which is lower for latter.
View original:
http://arxiv.org/abs/1202.2256
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