1307.6311 (Xiaojun Yang et al.)

Sr and Mn co-doped LaCuSO: A wide band gap oxide diluted magnetic
semiconductor with TC around 200K    [PDF]

Xiaojun Yang, Yuke Li, Chenyi Shen, Bingqi Si, Yunlei Sun, Qian Tao, Guanghan Cao Zhuan Xu, Fuchun Zhang

Here we report the synthesis of a bulk oxide diluted magnetic semiconductor (DMS) system La1-xSrxCu0.925Mn0.075SO (x=0, 0.025, 0.05, 0.075, and 0.1). As a wide band gap p-type oxide semiconductor, LaCuSO satisfies all the conditions forecasted theoretically to be a room temperature DMS. The Curie temperature (TC) is around 200K as x>0.05, which is among the highest TC record of known bulk DMS materials up to now. The system provides a rare example of oxide DMS system with p-type conduction, which is important for formation of high temperature spintronic devices.

View original: http://arxiv.org/abs/1307.6311