M. Teich, M. Wagner, D. Stehr, H. Schneider, M. Helm, G. Khitrova, H. M. Gibbs, A. C. Klettke, S. Chatterjee, M. Kira, S. W. Koch
Weak near-infrared and strong terahertz excitation are applied to study excitonic Rabi splitting in (GaIn)As/GaAs quantum wells. Pronounced anticrossing behavior of the split peaks is observed for different terahertz intensities and detunings relative to the intraexcitonic heavy-hole 1s-2p-transition. At intermediate to high electric fields the splitting becomes highly asymmetric and exhibits significant broadening. A fully microscopic theory is needed to explain the experimental results. Comparisons with a two-level model reveal the increasing importance of higher excitonic states at elevated excitation levels.
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http://arxiv.org/abs/1305.7084
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