1305.1612 (C. Martin et al.)

Bulk Fermi surface and electronic properties of
Cu$_{0.07}$Bi$_{2}$Se$_{3}$    [PDF]

C. Martin, V. Craciun, K. H. Miller, B. Uzakbaiuly, S. Buvaev, H. Berger, A. F. Hebard, D. B. Tanner

The electronic properties of Cu$_{0.07}$Bi$_{2}$Se$_{3}$ have been investigated using Shubnikov-de Haas and optical reflectance measurements. Quantum oscillations reveal a bulk, three-dimensional Fermi surface with anisotropy $k^{c}_{F}/k^{ab}_{F}\approx$ 2 and a modest increase in free-carrier concentration and in scattering rate with respect to the undoped Bi$_{2}$Se$_{3}$, also confirmed by reflectivity data. The effective mass is almost identical to that of Bi$_{2}$Se$_{3}$. Optical conductivity reveals a strong enhancement of the bound impurity bands with Cu addition, suggesting that a significant number of Cu atoms enter the interstitial sites between Bi and Se layers or may even substitute for Bi. This conclusion is also supported by X-ray diffraction measurements, where a significant increase of microstrain was found in Cu$_{0.07}$Bi$_{2}$Se$_{3}$, compared to Bi$_{2}$Se$_{3}$.

View original: http://arxiv.org/abs/1305.1612