1301.4527 (Wan Sik Hwang et al.)

Comparative Study of Chemically Synthesized and Exfoliated Multilayer
MoS2 Field-Effect Transistors    [PDF]

Wan Sik Hwang, Maja Remskar, Rusen Yan, Tom Kosel, Jong Kyung Park, Byung Jin Cho, Wilfried Haensch, Huili, Xing, Alan Seabaugh, Debdeep Jena

We report the realization of field-effect transistors (FETs) made with chemically synthesized multilayer 2D crystal semiconductor MoS2. Electrical properties such as the FET mobility, subthreshold swing, on/off ratio, and contact resistance of chemically synthesized (s-) MoS2 are indistinguishable from that of mechanically exfoliated (x-) MoS2, however flat-band voltages are different, possibly due to polar chemical residues originating in the transfer process. Electron diffraction studies and Raman spectroscopy show the structural similarity of s-MoS2 to x-MoS2. This initial report on the behavior and properties of s-MoS2 illustrates the feasibility of electronic devices using synthetic layered 2D crystal semiconductors.

View original: http://arxiv.org/abs/1301.4527