1208.2811 (V. Fleurov et al.)

The Nature of the magnetism-promoting hole state in the prototype
magnetic semiconductor GaAs: Mn    [PDF]

V. Fleurov, K. Kikoin, A. Zunger

Recent experiments [1] suggest that the ferromagnetism (FM) in GaAs: Mn is determined by the impurity band rather than holes in the valence band. We discuss here the physical mechanism of FM mediated by the carriers in impurity band, where the Mn d-level play a crucial role. The theory is based on the first principle approach.

View original: http://arxiv.org/abs/1208.2811