F. -T. Huang, M. -W. Chu, H. H. Kung, W. L. Lee, R. Sankar, S. -C. Liou, K. K. Wu, Y. K. Kuo, F. C. Chou
We studied the defects of Bi2Se3 generated from Bridgman growth of stoichiometric and nonstoichiometric self-fluxes. Growth habit, lattice size, and transport properties are strongly affected by the types of defect generated. Major defect types of Bi_Se antisite and partial Bi_2-layer intercalation are identified through combined studies of direct atomic-scale imaging with scanning transmission electron microscopy (STEM) in conjunction with energy-dispersive X-ray spectroscopy (STEM-EDX), X-ray diffraction, and Hall effect measurements. We propose a consistent explanation to the origin of defect type, growth morphology, and transport property.
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http://arxiv.org/abs/1208.1568
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