1208.0567 (Choongyu Hwang et al.)

Fermi velocity engineering in graphene by substrate modification    [PDF]

Choongyu Hwang, David A. Siegel, Sung-Kwan Mo, William Regan, Ariel Ismach, Yuegang Zhang, Alex Zettl, Alessandra Lanzara

The Fermi velocity is one of the key concepts in the study of a material, as it bears information on a variety of fundamental properties. Upon increasing demand on the device applications, graphene is viewed as a prototypical system for engineering Fermi velocity. Indeed, several efforts have succeeded in modifying Fermi velocity by varying charge carrier concentration. Here we present a powerful but simple new way to engineer Fermi velocity while holding the charge carrier concentration constant. We find that when the environment embedding graphene is modified, the Fermi velocity of graphene is (i) inversely proportional to its dielectric constant, reaching ~2.5$\times10^6$ m/s, the highest value for graphene on any substrate studied so far and (ii) clearly distinguished from an ordinary Fermi liquid. The method demonstrated here provides a new route toward Fermi velocity engineering in a variety of two-dimensional electron systems including topological insulators.

View original: http://arxiv.org/abs/1208.0567