Eduardo Machado-Charry, Paul Boulanger, Luigi Genovese, Normand Mousseau, Pascal Pochet
Magnetism in 2D atomic sheets has attracted considerable interest as its existence could allow the development of electronic and spintronic devices. Long considered a theoretical curiosity, defect induced spin-half paramagnetism in graphene was recently demonstrated in systems prepared by irradiation and the addition of fluorine adatoms [Nair et al., Nat. Phys. 8, 199 (2012)]. The existence of magnetism is not sufficient for devices, however, as states must be addressable and modifiable through the application of an external drive. We show that defects in hexagonal boron nitride present a strong interplay between the the N-N distance in the edge and the magnetic moments of the defects. By stress-induced geometry modifications, we change the ground state magnetic moment of the defects. This control is made possible by the triangular shape of the defects as well as the strong spin localisation in the magnetic state.
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http://arxiv.org/abs/1207.6457
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