Matthias Althammer, Eva-Maria Karrer-Müller, Sebastian T. B. Goennenwein, Matthias Opel, Rudolf Gross
The wide bandgap semiconductor ZnO is interesting for spintronic applications because of its small spin-orbit coupling implying a large spin coherence length. Utilizing vertical spin valve devices with ferromagnetic electrodes (TiN/Co/ZnO/Ni/Au), we all-electrically study the spin-polarized transport across ZnO. We fit the experimentally observed magnetoresistance of the spin valves in the framework of a two spin channel model with a spin-dependent interface resistance. This yields spin dffusion lengths of 10.8nm (2K), 10.7nm (10K), and 6.2nm (200K) in ZnO, corresponding to spin dephasing times of 87ns (2K), 14ns (10K), and 41ps (200K).
View original:
http://arxiv.org/abs/1205.3666
No comments:
Post a Comment