1202.3298 (Amit K. Das et al.)

Metal to semiconductor transition in lightly Al doped ZnO thin films
grown by sequential pulsed laser deposition    [PDF]

Amit K. Das, P. Misra, R. S. Ajimsha, D. M. Phase, L. M. Kukreja

Metal to semiconductor transition (MST) was observed in the temperature
dependent resitivity measurements in lightly Al doped ZnO (AZO) thin films with
different Al concentration in the range from 0 to ~ 0.5 % grown by sequential
pulsed laser deposition. MST transition temperature in the AZO films was found
to decrease with increasing Al concentration. The ~ 0.5 % doped AZO film showed
metallic behavior at all the temperature range without any MST. The MST and the
associated variation of MST transition temperature with Al concentration was
explained on the basis of competition between carrier activation behavior and
various scattering mechanisms.

View original: http://arxiv.org/abs/1202.3298